FDU8778 datasheet, mosfet equivalent, Fairchild Semiconductor

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Features and benefits

General Description
* Max rDS(on) = 14.0mΩ at VGS = 10V, ID = 35A
* Max rDS(on) = 21.0mΩ at VGS = 4.5V, ID = 33A
* Low gate charge: Qg(TOT) = 12.6nC(Typ), V.

Description

* Max rDS(on) = 14.0mΩ at VGS = 10V, ID = 35A
* Max rDS(on) = 21.0mΩ at VGS = 4.5V, ID = 33A
* Low gate charge: Qg(TOT) = 12.6nC(Typ), VGS = 10V
* Low gate resistance This N-Channel MOSFET has been designed specifically to improve t.

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